KSE801

Details

Manufacturer No KSE801

Manufacturer Samsung Semiconductor

Category Power Bipolar Transistors

Datasheet Datasheet

Description Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

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Type

Parameter

Objectid

1437069414
ECCN Code

EAR99
Risk Rank

9.49
Subcategory

Other Transistors
JESD-30 Code

R-PSFM-T3
Configuration

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
JEDEC-95 Code

TO-126
Package Shape

RECTANGULAR
Package Style

FLANGE MOUNT
Surface Mount

NO
Terminal Form

THROUGH-HOLE
Case Connection

ISOLATED
Terminal Position

SINGLE
Number of Elements

1
Number of Terminals

3
Package Description

FLANGE MOUNT, R-PSFM-T3
Part Life Cycle Code

Obsolete
Qualification Status

Not Qualified
Package Body Material

PLASTIC/EPOXY
Polarity/Channel Type

NPN
Reach Compliance Code

unknown
DC Current Gain-Min (hFE)

750
Operating Temperature-Max

150°C
Collector Current-Max (IC)

4 A
Power Dissipation-Max (Abs)

40 W
Transistor Element Material

SILICON
Collector-Emitter Voltage-Max

60 V

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Qty

Unit Price

Total Price

10688

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