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MJE803

Details

Manufacturer No MJE803

Manufacturer Motorola Semiconductor Products

Category Power Bipolar Transistors

Datasheet Datasheet

Description Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin

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Type

Parameter

  • HTS Code

    8541.29.00.95

  • ECCN Code

    EAR99

  • Rohs Code

    No

  • Popularity

    0

  • VCEsat-Max

    3 V

  • JESD-30 Code

    R-PSFM-T3

  • Configuration

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • JEDEC-95 Code

    TO-225AA

  • JESD-609 Code

    e0

  • Package Shape

    RECTANGULAR

  • Package Style

    FLANGE MOUNT

  • Surface Mount

    NO

  • Terminal Form

    THROUGH-HOLE

  • Terminal Finish

    Tin/Lead (Sn/Pb)

  • Terminal Position

    SINGLE

  • Number of Elements

    1

  • Number of Terminals

    3

  • Package Description

    FLANGE MOUNT, R-PSFM-T3

  • Part Life Cycle Code

    Transferred

  • Qualification Status

    Not Qualified

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    NPN

  • Reach Compliance Code

    unknown

  • Transistor Application

    SWITCHING

  • DC Current Gain-Min (hFE)

    100

  • Operating Temperature-Max

    150°C

  • Collector Current-Max (IC)

    4 A

  • Transistor Element Material

    SILICON

  • Collector-Emitter Voltage-Max

    80 V

  • Power Dissipation Ambient-Max

    40 W

  • Transition Frequency-Nom (fT)

    1 MHz

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Qty

Unit Price

Total Price

7931

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Advanced Semiconductor Inc

Power Bipolar Transistor, 4A I(C), 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN

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Fairchild Semiconductor Corporation

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