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IXFT52N30P

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Manufacturer No IXFT52N30P

Manufacturer IXYS Corporation

Category Power Field-Effect Transistors

Datasheet Datasheet

Description Power Field-Effect Transistor, 52A I(D), 300V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN

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Type

Parameter

  • ECCN Code

    EAR99

  • Pin Count

    4

  • Rohs Code

    Yes

  • Popularity

    0

  • Pbfree Code

    Yes

  • JESD-30 Code

    R-PSSO-G2

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code

    TO-268AA

  • JESD-609 Code

    e3

  • Package Shape

    RECTANGULAR

  • Package Style

    SMALL OUTLINE

  • Surface Mount

    YES

  • Terminal Form

    GULL WING

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode

    ENHANCEMENT MODE

  • Case Connection

    DRAIN

  • Terminal Finish

    MATTE TIN

  • Part Package Code

    TO-268AA

  • Terminal Position

    SINGLE

  • Number of Elements

    1

  • Number of Terminals

    2

  • Package Description

    TO-268, 3 PIN

  • Part Life Cycle Code

    Transferred

  • Qualification Status

    Not Qualified

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    N-CHANNEL

  • Reach Compliance Code

    not_compliant

  • Drain Current-Max (ID)

    52 A

  • Transistor Application

    SWITCHING

  • DS Breakdown Voltage-Min

    300 V

  • Operating Temperature-Max

    150°C

  • Moisture Sensitivity Level

    1

  • Transistor Element Material

    SILICON

  • Avalanche Energy Rating (Eas)

    1000 mJ

  • Peak Reflow Temperature (Cel)

    260

  • Drain-source On Resistance-Max

    0.066 Ω

  • Pulsed Drain Current-Max (IDM)

    150 A

  • Time@Peak Reflow Temperature-Max (s)

    10

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Qty

Unit Price

Total Price

18791

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Substitute Products

IXTT50N30

Littelfuse Inc

Power Field-Effect Transistor, 50A I(D), 300V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN

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IXTT52N30P

IXYS Corporation

Power Field-Effect Transistor, 52A I(D), 300V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN

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IXTP50N28T

IXYS Corporation

Power Field-Effect Transistor, 50A I(D), 280V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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IXFH52N30P

IXYS Corporation

Power Field-Effect Transistor, 52A I(D), 300V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC, TO-247, 3 PIN

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IXTA50N28T

IXYS Corporation

Power Field-Effect Transistor, 50A I(D), 280V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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IXTQ52N30P

IXYS Corporation

Power Field-Effect Transistor, 52A I(D), 300V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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IXTH50N30

Littelfuse Inc

Power Field-Effect Transistor, 50A I(D), 300V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN

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IXFV52N30P

IXYS Corporation

Power Field-Effect Transistor, 52A I(D), 300V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220, 3 PIN

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IXFX52N30Q

IXYS Corporation

Power Field-Effect Transistor, 52A I(D), 300V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, 3 PIN

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IXFV52N30PS

IXYS Corporation

Power Field-Effect Transistor, 52A I(D), 300V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220SMD, 3 PIN

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