Details
Manufacturer No IXTP50N28T
Manufacturer IXYS Corporation
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 50A I(D), 280V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Price
Call
Type
Parameter
ECCN Code
EAR99
Pin Count
3
Rohs Code
Yes
Popularity
2
Pbfree Code
Yes
Subcategory
FET General Purpose Power
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
JESD-609 Code
e1
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN SILVER COPPER
Part Package Code
TO-220AB
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
3
Package Description
FLANGE MOUNT, R-PSFM-T3
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
compliant
Drain Current-Max (ID)
50 A
DS Breakdown Voltage-Min
280 V
Operating Temperature-Max
150°C
Power Dissipation-Max (Abs)
340 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
50 A
Drain-source On Resistance-Max
0.06 Ω
Pulsed Drain Current-Max (IDM)
125 A
Send RFQ
Qty
Unit Price
Total Price
18796
call
call
As a leader in the electronic components industry, we are committed to providing the most comprehensive and accurate electronic component information and supplier prices.
Payment Method