Details
Manufacturer No IXTT50N30
Manufacturer IXYS Corporation
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 50A I(D), 300V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN
Price
Call
Type
Parameter
ECCN Code
EAR99
Pin Count
4
Rohs Code
Yes
Popularity
2
Pbfree Code
Yes
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-268AA
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
MATTE TIN
Part Package Code
TO-268AA
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Description
TO-268, 3 PIN
Part Life Cycle Code
Transferred
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
not_compliant
Drain Current-Max (ID)
50 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
300 V
Operating Temperature-Max
150°C
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
1500 mJ
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max
0.065 Ω
Pulsed Drain Current-Max (IDM)
200 A
Time@Peak Reflow Temperature-Max (s)
10
Send RFQ
Qty
Unit Price
Total Price
12359
call
call
As a leader in the electronic components industry, we are committed to providing the most comprehensive and accurate electronic component information and supplier prices.
Payment Method