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IXFN170N30P

Details

Manufacturer No IXFN170N30P

Manufacturer IXYS

Category Discrete Semiconductor Modules

Package SOT-227-4

Datasheet Datasheet

Description Discrete Semiconductor Modules 138 Amps 300V 0.018 Rds

Price

$49.17

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Type

Parameter

  • RoHS

    Details

  • Type

    Polar Power MOSFET HiPerFET

  • Brand

    IXYS

  • Width

    25.42 mm

  • Height

    12.22 mm

  • Length

    38.23 mm

  • Series

    IXFN170N30

  • Product

    Power MOSFET Modules

  • Fall Time

    16 ns

  • Packaging

    Tube

  • Rise Time

    29 ns

  • Tradename

    HiPerFET

  • Technology

    Si

  • Subcategory

    Discrete Semiconductor Modules

  • Unit Weight

    1.058219 oz

  • Manufacturer

    IXYS

  • Product Type

    Discrete Semiconductor Modules

  • Configuration

    Single

  • Mounting Style

    Screw Mounts

  • Package / Case

    SOT-227-4

  • Product Category

    Discrete Semiconductor Modules

  • Number of Channels

    1 Channel

  • Transistor Polarity

    N-Channel

  • Pd - Power Dissipation

    890 W

  • Vgs - Gate-Source Voltage

    - 20 V, + 20 V

  • Typical Turn-On Delay Time

    41 ns

  • Typical Turn-Off Delay Time

    79 ns

  • Id - Continuous Drain Current

    138 A

  • Maximum Operating Temperature

    150°C

  • Minimum Operating Temperature

    -55°C

  • Rds On - Drain-Source Resistance

    18 mOhms

  • Vds - Drain-Source Breakdown Voltage

    300 V

  • Vgs th - Gate-Source Threshold Voltage

    4.5 V

  • Factory Pack Quantity: Factory Pack Quantity

    10

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Qty

Unit Price

Total Price

1

$47.6949

$47.6949

50

$45.2364

$2261.82

100

$43.7613

$4376.13

1000

$41.7945

$41794.5

Substitute Products

IXFN160N30T

IXYS Semiconductor

Trans MOSFET N-CH 300V 130A Automotive 4Pin SOT-227B

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IXFN170N30P

Littelfuse Inc

Power Field-Effect Transistor, 138A I(D), 300V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4

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IXFN160N30T

IXYS Corporation

Power Field-Effect Transistor, 130A I(D), 300V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4

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IXFN130N30

IXYS Corporation

Power Field-Effect Transistor, 130A I(D), 300V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4

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APT30M19JVR

Advanced Power Technology

Power Field-Effect Transistor, 130A I(D), 300V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4

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