IXFN130N30

Details

Manufacturer No IXFN130N30

Manufacturer IXYS

Category Transistors - FETs, MOSFETs - Single

Package SOT-227-4, miniBLOC

Datasheet Datasheet

Description MOSFET N-CH 300V 130A SOT-227B

Price

$42.432

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Type

Parameter

  • Mfr

    IXYS

  • Series

    HiPerFET™

  • Package

    Tube

  • FET Type

    N-Channel

  • Vgs (Max)

    ±20V

  • Technology

    MOSFET (Metal Oxide)

  • FET Feature

    -

  • Mounting Type

    Chassis Mount

  • Package / Case

    SOT-227-4, miniBLOC

  • Product Status

    Not For New Designs

  • Vgs(th) (Max) @ Id

    4V @ 8mA

  • Base Product Number

    IXFN130

  • Operating Temperature

    -55°C~150°C(TJ)

  • Rds On (Max) @ Id, Vgs

    22mOhm @ 500mA, 10V

  • Power Dissipation (Max)

    700W (Tc)

  • Supplier Device Package

    SOT-227B

  • Gate Charge (Qg) (Max) @ Vgs

    380 nC @ 10 V

  • Drain to Source Voltage (Vdss)

    300 V

  • Input Capacitance (Ciss) (Max) @ Vds

    14500 pF @ 25 V

  • Drive Voltage (Max Rds On, Min Rds On)

    10V

  • Current - Continuous Drain (Id) @ 25°C

    130A (Tc)

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Qty

Unit Price

Total Price

1

$41.15904

$41.15904

50

$39.03744

$1951.872

100

$37.76448

$3776.448

1000

$36.0672

$36067.2

Substitute Products

IXFN170N30P

IXYS

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APT30M19JVFR

Microchip Technology

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APT30M19JVR

Microsemi

SOT-227 N-CH 300V 130A

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IXFN170N30P

Littelfuse Inc

Power Field-Effect Transistor, 138A I(D), 300V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4

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IXFN160N30T

IXYS Corporation

Power Field-Effect Transistor, 130A I(D), 300V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4

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APT30M19JVR

Advanced Power Technology

Power Field-Effect Transistor, 130A I(D), 300V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4

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