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HUF75645S3S

Details

Manufacturer No HUF75645S3S

Manufacturer Rochester Electronics LLC

Category Power Field-Effect Transistors

Datasheet Datasheet

Description 75A, 100V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

Price

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Type

Parameter

  • Popularity

    228

  • Pbfree Code

    Yes

  • JESD-30 Code

    R-PSSO-G2

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code

    TO-263AB

  • Package Shape

    RECTANGULAR

  • Package Style

    SMALL OUTLINE

  • Surface Mount

    YES

  • Terminal Form

    GULL WING

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode

    ENHANCEMENT MODE

  • Case Connection

    DRAIN

  • Terminal Finish

    NOT SPECIFIED

  • Terminal Position

    SINGLE

  • Number of Elements

    1

  • Number of Terminals

    2

  • Part Life Cycle Code

    Active

  • Qualification Status

    COMMERCIAL

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    N-CHANNEL

  • Reach Compliance Code

    unknown

  • Drain Current-Max (ID)

    75 A

  • Transistor Application

    SWITCHING

  • DS Breakdown Voltage-Min

    100 V

  • Moisture Sensitivity Level

    NOT SPECIFIED

  • Transistor Element Material

    SILICON

  • Peak Reflow Temperature (Cel)

    NOTSPECIFIED

  • Drain-source On Resistance-Max

    0.014 Ω

  • Time@Peak Reflow Temperature-Max (s)

    NOTSPECIFIED

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Qty

Unit Price

Total Price

13411

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HUF75645S3ST

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HUF75645S3S_NL

Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,

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