HUF75645S3ST

Details

Manufacturer No HUF75645S3ST

Manufacturer Fairchild Semiconductor Corporation

Category Power Field-Effect Transistors

Description Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Price

$3.364

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Type

Parameter

HTS Code

8541.29.00.95
ECCN Code

EAR99
Pin Count

2
Rohs Code

Yes
Brand Name

Fairchild Semiconductor
Popularity

1446
Pbfree Code

Yes
Subcategory

FET General Purpose Powers
JESD-30 Code

R-PSSO-G2
Configuration

SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code

TO-263AB
JESD-609 Code

e3
Package Shape

RECTANGULAR
Package Style

SMALL OUTLINE
Surface Mount

YES
Terminal Form

GULL WING
FET Technology

METAL-OXIDE SEMICONDUCTOR
Operating Mode

ENHANCEMENT MODE
Case Connection

DRAIN
Terminal Finish

MATTE TIN
Part Package Code

D2PAK
Terminal Position

SINGLE
Number of Elements

1
Source Content uid

HUF75645S3ST
Number of Terminals

2
Part Life Cycle Code

Transferred
Qualification Status

Not Qualified
Package Body Material

PLASTIC/EPOXY
Polarity/Channel Type

N-CHANNEL
Reach Compliance Code

not_compliant
Drain Current-Max (ID)

75 A
Transistor Application

SWITCHING
DS Breakdown Voltage-Min

100 V
Manufacturer Package Code

2LD,TO263, SURFACE MOUNT
Operating Temperature-Max

175°C
Moisture Sensitivity Level

1
Power Dissipation-Max (Abs)

310 W
Transistor Element Material

SILICON
Drain Current-Max (Abs) (ID)

75 A
Peak Reflow Temperature (Cel)

260
Drain-source On Resistance-Max

0.014 Ω
Time@Peak Reflow Temperature-Max (s)

30

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Qty

Unit Price

Total Price

$3.26308

$3.09488

$154.744

100

$2.99396

$299.396

1000

$2.8594

$2859.4

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