Details
Manufacturer No FQA7N80_F109
Manufacturer Fairchild Semiconductor Corporation
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 7.2A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PN, 3 PIN
Price
Call
Type
Parameter
ECCN Code
EAR99
Pin Count
3
Rohs Code
Yes
Popularity
3
Subcategory
FET General Purpose Power
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Part Package Code
TO-3PN
Terminal Position
SINGLE
Number of Elements
1
Source Content uid
FQA7N80_F109
Number of Terminals
3
Package Description
FLANGE MOUNT, R-PSFM-T3
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
compliant
Drain Current-Max (ID)
7.2 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
800 V
Operating Temperature-Max
150°C
Power Dissipation-Max (Abs)
198 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
7.2 A
Avalanche Energy Rating (Eas)
580 mJ
Peak Reflow Temperature (Cel)
NOTSPECIFIED
Drain-source On Resistance-Max
1.5 Ω
Pulsed Drain Current-Max (IDM)
28.8 A
Time@Peak Reflow Temperature-Max (s)
NOTSPECIFIED
Send RFQ
Qty
Unit Price
Total Price
11216
call
call
As a leader in the electronic components industry, we are committed to providing the most comprehensive and accurate electronic component information and supplier prices.
Payment Method