Details
Manufacturer No STB7NC80Z-1
Manufacturer STMicroelectronics
Category Power Field-Effect Transistors
Datasheet Datasheet
Description 6.5A, 800V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TABLESS TO-220, I2PAK-3
Price
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Type
Parameter
ECCN Code
EAR99
Pin Count
3
Popularity
0
Subcategory
FET General Purpose Power
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-262AA
Package Shape
RECTANGULAR
Package Style
IN-LINE
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Part Package Code
TO-262AA
Terminal Position
SINGLE
Number of Elements
1
Source Content uid
STB7NC80Z-1
Number of Terminals
3
Package Description
IN-LINE, R-PSIP-T3
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
compliant
Drain Current-Max (ID)
6.5 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
800 V
Operating Temperature-Max
150°C
Power Dissipation-Max (Abs)
135 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
6.1 A
Avalanche Energy Rating (Eas)
290 mJ
Drain-source On Resistance-Max
1.5 Ω
Pulsed Drain Current-Max (IDM)
26 A
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Qty
Unit Price
Total Price
11214
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