Details
Manufacturer No TK20J60W
Manufacturer Toshiba America Electronic Components
Category Power Field-Effect Transistors
Datasheet Datasheet
Description TRANSISTOR POWER, FET, FET General Purpose Power
Price
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Type
Parameter
ECCN Code
EAR99
Rohs Code
No
Popularity
43
Subcategory
FET General Purpose Power
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Source Content uid
TK20J60W
Number of Terminals
3
Package Description
FLANGE MOUNT, R-PSFM-T3
Part Life Cycle Code
Active
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
unknown
Drain Current-Max (ID)
20 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
600 V
Operating Temperature-Max
150°C
Power Dissipation-Max (Abs)
165 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
20 A
Avalanche Energy Rating (Eas)
200 mJ
Drain-source On Resistance-Max
0.155 Ω
Pulsed Drain Current-Max (IDM)
80 A
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Unit Price
Total Price
5298
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