Details
Manufacturer No BUK769R6-80E
Manufacturer Nexperia
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor
Price
Call
Type
Parameter
ECCN Code
EAR99
Rohs Code
Yes
Popularity
27
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Date Of Intro
2017-02-01
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Reference Standard
AEC-Q101; IEC-60134
Source Content uid
BUK769R6-80E
Number of Terminals
2
Package Description
SMALL OUTLINE, R-PSSO-G2
Part Life Cycle Code
Obsolete
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
not_compliant
Drain Current-Max (ID)
75 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
80 V
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
146 mJ
Peak Reflow Temperature (Cel)
245
Drain-source On Resistance-Max
0.0096 Ω
Pulsed Drain Current-Max (IDM)
354 A
Time@Peak Reflow Temperature-Max (s)
30
Send RFQ
Qty
Unit Price
Total Price
18732
call
call
As a leader in the electronic components industry, we are committed to providing the most comprehensive and accurate electronic component information and supplier prices.
Payment Method