Details
Manufacturer No IRFR3607TRR
Manufacturer Infineon Technologies AG
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
Price
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Type
Parameter
YTEOL
5.97
Objectid
8006012134
ECCN Code
EAR99
Risk Rank
6.93
Rohs Code
No
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252AA
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Number of Elements
1
Source Content uid
IRFR3607TRR
Number of Terminals
2
Package Description
PLASTIC, DPAK-3
Part Life Cycle Code
Active
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
compliant
Drain Current-Max (ID)
56 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
75 V
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
120 mJ
Drain-source On Resistance-Max
0.009 Ω
Pulsed Drain Current-Max (IDM)
310 A
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Qty
Unit Price
Total Price
5712
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