Details
Manufacturer No 934056371118
Manufacturer Nexperia
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor
Price
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Type
Parameter
Objectid
8254313065
ECCN Code
EAR99
Risk Rank
8.67
Rohs Code
Yes
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Date Of Intro
2017-02-01
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN
Terminal Position
SINGLE
Number of Elements
1
Source Content uid
934056371118
Number of Terminals
2
Package Description
SMALL OUTLINE, R-PSSO-G2
Part Life Cycle Code
Obsolete
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
not_compliant
Drain Current-Max (ID)
75 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
75 V
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
560 mJ
Peak Reflow Temperature (Cel)
245
Drain-source On Resistance-Max
0.009 Ω
Pulsed Drain Current-Max (IDM)
440 A
Time@Peak Reflow Temperature-Max (s)
30
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Qty
Unit Price
Total Price
5718
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