2SD2130

Details

Manufacturer No 2SD2130

Manufacturer Toshiba America Electronic Components

Category Power Bipolar Transistors

Datasheet Datasheet

Description TRANSISTOR 4 A, 50 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-8H1A, 3 PIN, BIP General Purpose Power

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Type

Parameter

HTS Code

8541.29.00.75
Objectid

1431202871
ECCN Code

EAR99
Pin Count

3
Risk Rank

9.76
Rohs Code

No
VCEsat-Max

1.5 V
Subcategory

Other Transistors
JESD-30 Code

R-PSFM-T3
Configuration

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Package Shape

RECTANGULAR
Package Style

FLANGE MOUNT
Surface Mount

NO
Terminal Form

THROUGH-HOLE
Terminal Position

SINGLE
Number of Elements

1
Source Content uid

2SD2130
Number of Terminals

3
Package Description

FLANGE MOUNT, R-PSFM-T3
Part Life Cycle Code

Obsolete
Qualification Status

Not Qualified
Package Body Material

PLASTIC/EPOXY
Polarity/Channel Type

NPN
Reach Compliance Code

unknown
Transistor Application

SWITCHING
DC Current Gain-Min (hFE)

1000
Operating Temperature-Max

150°C
Collector Current-Max (IC)

4 A
Power Dissipation-Max (Abs)

1.5 W
Transistor Element Material

SILICON
Collector-Emitter Voltage-Max

50 V
Peak Reflow Temperature (Cel)

NOTSPECIFIED
Power Dissipation Ambient-Max

10 W
Transition Frequency-Nom (fT)

60 MHz
Time@Peak Reflow Temperature-Max (s)

NOTSPECIFIED

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Qty

Unit Price

Total Price

10667

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