2N2150

Details

Manufacturer No 2N2150

Manufacturer NJS

Category NPN

Datasheet Datasheet

Description Trans GP BJT NPN 100V 2A 4-Pin TO-111

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Type

Parameter

Type

NPN
Category

Bipolar Power
Material

Si
Configuration

Single
Maximum Power Dissipation

30000mW
Maximum DC Collector Current

2A
Maximum Emitter Base Voltage

8V
Maximum Operating Temperature

200°C
Maximum Collector Base Voltage

150V
Maximum Collector Emitter Voltage

100V
Maximum Collector Emitter Saturation Voltage

1@0.1A@1AV

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Qty

Unit Price

Total Price

25319

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2N3749

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2N2879

Semitronics Corp

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-59, Metal, 3 Pin, TO-59, 3 PIN

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2N2877

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JANTXV2N3749

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Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 4 Pin

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2N2879

General Diode Corp

Small Signal Bipolar Transistor, 5A I(C), NPN

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Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 4 Pin, TO-111/I, 4 PIN

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Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 4 Pin

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Power Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3 Pin

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