2N3997

Details

Manufacturer No 2N3997

Manufacturer NJS

Category NPN

Datasheet Datasheet

Description Trans GP BJT NPN 80V 5A 4-Pin TO-111

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Type

Parameter

Type

NPN
Category

Bipolar Power
Material

Si
Configuration

Single
Maximum Power Dissipation

2000mW
Maximum DC Collector Current

5A
Maximum Emitter Base Voltage

8V
Maximum Operating Temperature

200°C
Maximum Collector Base Voltage

100V
Maximum Collector Emitter Voltage

80V
Maximum Collector Emitter Saturation Voltage

0.25@0.1A@1A|2@0.5A@5AV

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Qty

Unit Price

Total Price

19531

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Substitute Products

2N3997

TT Electronics Power and Hybrid / Semelab Limited

5A, 80V, NPN, Si, POWER TRANSISTOR, TO-111, TO-111, 3 PIN

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2N3997R1

TT Electronics Power and Hybrid / Semelab Limited

5A, 80V, NPN, Si, POWER TRANSISTOR, TO-111, TO-111, 3 PIN

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2N3997

API Technologies Corp

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 4 Pin,

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2N3997

Silicon Transistor Corporation

Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-59, Metal, 3 Pin

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2N3997

Texas Instruments

5A, 80V, NPN, Si, POWER TRANSISTOR, TO-111

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2N3997

Vishay Intertechnologies

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 4 Pin, ISOLATED TO-111, 4 PIN

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JANTX2N3997

API Technologies Corp

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 4 Pin

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