ZXTP2012ASTZ

Details

Manufacturer No ZXTP2012ASTZ

Manufacturer Diodes Incorporated

Category Bipolar Transistors - BJT

Package TO-92-3

Datasheet Datasheet

Description Bipolar Transistors - BJT PNP 60V 3.5A 3-PIN

Price

$1.28

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Type

Parameter

  • RoHS

    Details

  • Brand

    Diodes Incorporated

  • Width

    2.41 mm

  • Height

    4.01 mm

  • Length

    4.77 mm

  • Series

    ZXTP20

  • Packaging

    Ammo Pack

  • Technology

    Si

  • Subcategory

    Transistors

  • Manufacturer

    Diodes Incorporated

  • Product Type

    BJTs - Bipolar Transistors

  • Configuration

    Single

  • Mounting Style

    Through Hole

  • Package / Case

    TO-92-3

  • Product Category

    Bipolar Transistors - BJT

  • Transistor Polarity

    PNP

  • Pd - Power Dissipation

    1 W

  • DC Current Gain hFE Max

    100 at 10 mA, 1 V

  • Gain Bandwidth Product fT

    120 MHz

  • Emitter- Base Voltage VEBO

    7 V

  • Collector- Base Voltage VCBO

    100 V

  • Maximum DC Collector Current

    3.5 A

  • Maximum Operating Temperature

    150°C

  • Minimum Operating Temperature

    -55°C

  • Collector- Emitter Voltage VCEO Max

    60 V

  • Collector-Emitter Saturation Voltage

    145 mV

  • Factory Pack Quantity: Factory Pack Quantity

    2000

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Qty

Unit Price

Total Price

1

$1.2416

$1.2416

50

$1.1776

$58.88

100

$1.1392

$113.92

1000

$1.088

$1088

Substitute Products

ZXTP2012ASTZ

Zetex / Diodes Inc

Small Signal Bipolar Transistor, 3.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, E-LINE, 3 PIN

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ZXTP2012A

Diodes Incorporated

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KSA708CYTA

onsemi

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KSA708YTA

onsemi

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ZXTP2012A

Diodes

Bipolar Small Signal 60V PNP Low Sat

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