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ZXTN2011GTA

Details

Manufacturer No ZXTN2011GTA

Manufacturer Diodes Incorporated

Category Single BJT Transistors

Package TO-261-4, TO-261AA

Datasheet Datasheet

Description

Price

$0.41773

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Type

Parameter

  • RoHS

    yes

  • Mount

    Surface Mount

  • Width

    3.7mm

  • Height

    1.65mm

  • Length

    6.7mm

  • Pbfree

    no

  • Weight

    7.994566mg

  • hFE Min

  • HTS Code

  • Polarity

  • ECCN Code

    EAR99

  • Frequency

    130MHz

  • Inventory

    1277

  • Lead Free

    Lead Free

  • Packaging

    Tape & Reel (TR)

  • Pin Count

    4

  • Published

    2006

  • REACH SVHC

    No SVHC

  • VCEsat-Max

  • Part Status

    Active

  • Power - Max

  • RoHS Status

    ROHS3 Compliant

  • Subcategory

  • JESD-30 Code

  • Configuration

  • JESD-609 Code

    e3

  • Max Frequency

  • Mounting Type

    Surface Mount

  • Surface Mount

  • Terminal Form

    GULL WING

  • Current Rating

    6A

  • Number of Pins

    4

  • Package / Case

    TO-261-4, TO-261AA

  • Case Connection

    COLLECTOR

  • Contact Plating

  • Terminal Finish

    Matte Tin (Sn)

  • Transistor Type

    NPN

  • Base Part Number

    ZXTN2011

  • Lifecycle Status

  • Factory Lead Time

    15 Weeks

  • Power Dissipation

    3W

  • Terminal Position

    DUAL

  • Additional Feature

  • Number of Elements

    1

  • Reference Standard

  • Voltage - Rated DC

    100V

  • Radiation Hardening

    No

  • Qualification Status

  • Transition Frequency

    130MHz

  • Element Configuration

    Single

  • Max Breakdown Voltage

    100V

  • Max Collector Current

    6A

  • Max Power Dissipation

    3W

  • Operating Temperature

    -55°C~150°CTJ

  • Polarity/Channel Type

    NPN

  • Reach Compliance Code

  • Frequency - Transition

  • Gain Bandwidth Product

    130MHz

  • Number of Terminations

    4

  • Transistor Application

    SWITCHING

  • Turn On Time-Max (ton)

  • Supplier Device Package

  • Turn Off Time-Max (toff)

  • Max Operating Temperature

  • Min Operating Temperature

  • Emitter Base Voltage (VEBO)

    7V

  • Power Dissipation-Max (Abs)

  • Transistor Element Material

    SILICON

  • Continuous Collector Current

    6A

  • Collector Base Voltage (VCBO)

    200V

  • Peak Reflow Temperature (Cel)

    260

  • Vce Saturation (Max) @ Ib, Ic

    220mV @ 500mA, 5A

  • Current - Collector (Ic) (Max)

  • Collector Emitter Voltage (VCEO)

    100V

  • Current - Collector Cutoff (Max)

    50nA ICBO

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Collector Emitter Breakdown Voltage

    100V

  • Collector Emitter Saturation Voltage

    220mV

  • Time@Peak Reflow Temperature-Max (s)

    40

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    100 @ 2A 2V

  • Voltage - Collector Emitter Breakdown (Max)

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Qty

Unit Price

Total Price

1

$0.4052

$0.4052

50

$0.38431

$19.2155

100

$0.37178

$37.178

1000

$0.35507

$355.07

Substitute Products

ZXTN2011GTC

Diodes Incorporated

Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin, TO-261AA, 4 PIN

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ZXTN2011GTA

Zetex / Diodes Inc

Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN

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