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ZXT3M322TA

Details

Manufacturer No ZXT3M322TA

Manufacturer Diodes Incorporated

Category Single BJT Transistors

Package 3-PowerSMD, Flat Leads

Datasheet Datasheet

Description

Price

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Type

Parameter

  • RoHS

    yes

  • Mount

    Surface Mount

  • Width

    2mm

  • Height

    1mm

  • Length

    2mm

  • Pbfree

  • Weight

  • hFE Min

  • HTS Code

  • Polarity

  • ECCN Code

    EAR99

  • Frequency

    190MHz

  • Inventory

    3279

  • Lead Free

    Lead Free

  • Packaging

    Tape & Reel (TR)

  • Pin Count

    5

  • Published

    2006

  • Part Status

    Obsolete

  • Power - Max

  • RoHS Status

    ROHS3 Compliant

  • Subcategory

    Other Transistors

  • JESD-30 Code

    S-PDSO-F3

  • JESD-609 Code

    e3

  • Mounting Type

    Surface Mount

  • Surface Mount

  • Terminal Form

  • Current Rating

    -4A

  • Number of Pins

    322

  • Package / Case

    3-PowerSMD, Flat Leads

  • Case Connection

    COLLECTOR

  • Terminal Finish

    Matte Tin (Sn)

  • Transistor Type

    PNP

  • Base Part Number

    ZXT3M322

  • Lifecycle Status

  • Power Dissipation

    3W

  • Terminal Position

    DUAL

  • Additional Feature

  • Number of Elements

    1

  • Reference Standard

  • Voltage - Rated DC

    -12V

  • Radiation Hardening

  • Qualification Status

    Not Qualified

  • Transition Frequency

    190MHz

  • Element Configuration

    Single

  • Max Breakdown Voltage

    40V

  • Max Collector Current

    3A

  • Max Power Dissipation

    3W

  • Operating Temperature

    -55°C~150°CTJ

  • Polarity/Channel Type

    PNP

  • Reach Compliance Code

  • Frequency - Transition

  • Gain Bandwidth Product

    190MHz

  • Number of Terminations

    3

  • Transistor Application

    SWITCHING

  • Turn On Time-Max (ton)

  • Supplier Device Package

  • Turn Off Time-Max (toff)

  • DC Current Gain-Min (hFE)

  • Max Operating Temperature

  • Min Operating Temperature

  • Emitter Base Voltage (VEBO)

    7.5V

  • Transistor Element Material

    SILICON

  • Continuous Collector Current

    -3A

  • Collector Base Voltage (VCBO)

    -50V

  • Peak Reflow Temperature (Cel)

    260

  • Vce Saturation (Max) @ Ib, Ic

    370mV @ 250mA, 2.5A

  • Collector-Base Capacitance-Max

  • Current - Collector (Ic) (Max)

  • Collector Emitter Voltage (VCEO)

    370mV

  • Current - Collector Cutoff (Max)

    25nA

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Collector Emitter Breakdown Voltage

    40V

  • Collector Emitter Saturation Voltage

    -240mV

  • Time@Peak Reflow Temperature-Max (s)

    40

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    60 @ 1.5A 2V

  • Voltage - Collector Emitter Breakdown (Max)

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Qty

Unit Price

Total Price

8550

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