Details
Manufacturer No IPS09N03LAG
Manufacturer Infineon Technologies AG
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 50A I(D), 25V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, ROHS COMPLIANT, PLASTIC PACKAGE-3
Price
Call
Type
Parameter
ECCN Code
EAR99
Pin Count
3
Rohs Code
Yes
Popularity
8
Subcategory
FET General Purpose Power
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-251
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
IN-LINE
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
MATTE TIN
Part Package Code
TO-251
Terminal Position
SINGLE
Additional Feature
LOGIC LEVEL COMPATIBLE
Number of Elements
1
Source Content uid
IPS09N03LAG
Number of Terminals
3
Package Description
IN-LINE, R-PSIP-T3
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
compliant
Drain Current-Max (ID)
50 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
25 V
Operating Temperature-Max
175°C
Power Dissipation-Max (Abs)
63 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
50 A
Avalanche Energy Rating (Eas)
75 mJ
Drain-source On Resistance-Max
0.015 Ω
Pulsed Drain Current-Max (IDM)
350 A
Send RFQ
Qty
Unit Price
Total Price
18917
call
call
As a leader in the electronic components industry, we are committed to providing the most comprehensive and accurate electronic component information and supplier prices.
Payment Method