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SPP08N80C3XKSA1

Details

Manufacturer No SPP08N80C3XKSA1

Manufacturer Infineon Technologies

Category Transistors - FETs, MOSFETs - Single

Package TO-220-3

Datasheet Datasheet

Description MOSFET N-CH 800V 8A TO220-3

Price

$3.27

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Type

Parameter

  • Mfr

    Infineon Technologies

  • Series

    CoolMOS™

  • Package

    Tube

  • FET Type

    N-Channel

  • Vgs (Max)

    ±20V

  • Technology

    MOSFET (Metal Oxide)

  • FET Feature

    -

  • Mounting Type

    Through Hole

  • Package / Case

    TO-220-3

  • Product Status

    Active

  • Vgs(th) (Max) @ Id

    3.9V @ 470µA

  • Base Product Number

    SPP08N80

  • Operating Temperature

    -55°C~150°C(TJ)

  • Rds On (Max) @ Id, Vgs

    650mOhm @ 5.1A, 10V

  • Power Dissipation (Max)

    104W (Tc)

  • Supplier Device Package

    PG-TO220-3

  • Gate Charge (Qg) (Max) @ Vgs

    60 nC @ 10 V

  • Drain to Source Voltage (Vdss)

    800 V

  • Input Capacitance (Ciss) (Max) @ Vds

    1100 pF @ 100 V

  • Drive Voltage (Max Rds On, Min Rds On)

    10V

  • Current - Continuous Drain (Id) @ 25°C

    8A (Tc)

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Qty

Unit Price

Total Price

1

$3.1719

$3.1719

50

$3.0084

$150.42

100

$2.9103

$291.03

1000

$2.7795

$2779.5

Substitute Products

SPI08N80C3XK

Infineon Technologies AG

Power Field-Effect Transistor, 8A I(D), 800V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN

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SPI08N80C3XKSA1

Infineon Technologies AG

Power Field-Effect Transistor, 8A I(D), 800V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN

Send RFQ

SPI08N80C3

Infineon Technologies AG

Power Field-Effect Transistor, 8A I(D), 800V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN

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