Details
Manufacturer No SPI08N80C3XK
Manufacturer Infineon Technologies AG
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 8A I(D), 800V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN
Price
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Type
Parameter
YTEOL
6.45
Objectid
8302626427
ECCN Code
EAR99
Risk Rank
7.63
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-262AA
Package Shape
RECTANGULAR
Package Style
IN-LINE
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED, HIGH VOLTAGE
Number of Elements
1
Number of Terminals
3
Package Description
ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN
Part Life Cycle Code
Active
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
compliant
Drain Current-Max (ID)
8 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
800 V
Operating Temperature-Max
150°C
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
340 mJ
Drain-source On Resistance-Max
0.65 Ω
Pulsed Drain Current-Max (IDM)
24 A
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Unit Price
Total Price
5704
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