Details
Manufacturer No SPB100N04S2-04
Manufacturer Infineon
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 100A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-263, 3 PIN
Price
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Type
Parameter
ECCN Code
EAR99
Pin Count
3
Popularity
27
Subcategory
FET General Purpose Power
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
MATTE TIN
Factory Lead Time
4 weeks
Part Package Code
TO-263
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Source Content uid
SPB100N04S2-04
Number of Terminals
2
Package Description
SMALL OUTLINE, R-PSSO-G2
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
unknown
Drain Current-Max (ID)
100 A
DS Breakdown Voltage-Min
40 V
Operating Temperature-Max
175°C
Power Dissipation-Max (Abs)
300 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
100 A
Avalanche Energy Rating (Eas)
810 mJ
Drain-source On Resistance-Max
0.0033 Ω
Pulsed Drain Current-Max (IDM)
400 A
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Qty
Unit Price
Total Price
6413
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