Details
Manufacturer No SIHFBF20L-GE3
Manufacturer Vishay Siliconix
Category Power Field-Effect Transistors
Datasheet Datasheet
Description TRANSISTOR 1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, TO-262, I2PAK-3, FET General Purpose Power
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Type
Parameter
ECCN Code
EAR99
Pin Count
3
Rohs Code
Yes
Popularity
0
Pbfree Code
Yes
Subcategory
FET General Purpose Power
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-262AA
Package Shape
RECTANGULAR
Package Style
IN-LINE
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Part Package Code
TO-262AA
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
3
Package Description
IN-LINE, R-PSIP-T3
Part Life Cycle Code
Active
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
unknown
Drain Current-Max (ID)
1.7 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
900 V
Operating Temperature-Max
150°C
Power Dissipation-Max (Abs)
54 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
1.7 A
Avalanche Energy Rating (Eas)
180 mJ
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max
8 Ω
Pulsed Drain Current-Max (IDM)
6.8 A
Time@Peak Reflow Temperature-Max (s)
40
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Unit Price
Total Price
19023
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