SIHFBF20L-GE3

Details

Manufacturer No SIHFBF20L-GE3

Manufacturer Vishay Siliconix

Category Power Field-Effect Transistors

Datasheet Datasheet

Description TRANSISTOR 1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, TO-262, I2PAK-3, FET General Purpose Power

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Type

Parameter

  • ECCN Code

    EAR99

  • Pin Count

    3

  • Rohs Code

    Yes

  • Popularity

    0

  • Pbfree Code

    Yes

  • Subcategory

    FET General Purpose Power

  • JESD-30 Code

    R-PSIP-T3

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code

    TO-262AA

  • Package Shape

    RECTANGULAR

  • Package Style

    IN-LINE

  • Surface Mount

    NO

  • Terminal Form

    THROUGH-HOLE

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode

    ENHANCEMENT MODE

  • Part Package Code

    TO-262AA

  • Terminal Position

    SINGLE

  • Additional Feature

    AVALANCHE RATED

  • Number of Elements

    1

  • Number of Terminals

    3

  • Package Description

    IN-LINE, R-PSIP-T3

  • Part Life Cycle Code

    Active

  • Qualification Status

    Not Qualified

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    N-CHANNEL

  • Reach Compliance Code

    unknown

  • Drain Current-Max (ID)

    1.7 A

  • Transistor Application

    SWITCHING

  • DS Breakdown Voltage-Min

    900 V

  • Operating Temperature-Max

    150°C

  • Power Dissipation-Max (Abs)

    54 W

  • Transistor Element Material

    SILICON

  • Drain Current-Max (Abs) (ID)

    1.7 A

  • Avalanche Energy Rating (Eas)

    180 mJ

  • Peak Reflow Temperature (Cel)

    260

  • Drain-source On Resistance-Max

    8 Ω

  • Pulsed Drain Current-Max (IDM)

    6.8 A

  • Time@Peak Reflow Temperature-Max (s)

    40

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Total Price

19023

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IRFBF20LPBF

International Rectifier

Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN

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IRFBF20L

International Rectifier

Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN

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SIHFBF20L

Vishay Siliconix

TRANSISTOR 1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, I2PAK-3, FET General Purpose Power

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SIHFBF20L-E3

Vishay Siliconix

TRANSISTOR 1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3, FET General Purpose Power

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FQI2N90TU

Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 2.2A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

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