Details
Manufacturer No IRFBF20LPBF
Manufacturer International Rectifier
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
Price
$2.23
Type
Parameter
ECCN Code
EAR99
Pin Count
3
Rohs Code
Yes
Popularity
205
Pbfree Code
Yes
Subcategory
FET General Purpose Power
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-262AA
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
IN-LINE
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
MATTE TIN OVER NICKEL
Part Package Code
TO-262AA
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Number of Elements
1
Number of Terminals
3
Package Description
TO-262, 3 PIN
Part Life Cycle Code
Transferred
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
not_compliant
Drain Current-Max (ID)
1.7 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
900 V
Operating Temperature-Max
150°C
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
54 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
1.7 A
Avalanche Energy Rating (Eas)
180 mJ
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max
8 Ω
Pulsed Drain Current-Max (IDM)
6.8 A
Time@Peak Reflow Temperature-Max (s)
30
Send RFQ
Qty
Unit Price
Total Price
1
$2.1631
$2.1631
50
$2.0516
$102.58
100
$1.9847
$198.47
1000
$1.8955
$1895.5
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