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SI2316DS-T1

Details

Manufacturer No SI2316DS-T1

Manufacturer Vishay Intertechnologies

Category Small Signal Field-Effect Transistors

Datasheet Datasheet

Description Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN

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Type

Parameter

  • Objectid

    1292919942

  • ECCN Code

    EAR99

  • Risk Rank

    8.93

  • Rohs Code

    No

  • Subcategory

    FET General Purpose Power

  • JESD-30 Code

    R-PDSO-G3

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code

    TO-236AB

  • JESD-609 Code

    e0

  • Package Shape

    RECTANGULAR

  • Package Style

    SMALL OUTLINE

  • Surface Mount

    YES

  • Terminal Form

    GULL WING

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode

    ENHANCEMENT MODE

  • Terminal Finish

    TIN LEAD

  • Terminal Position

    DUAL

  • Number of Elements

    1

  • Number of Terminals

    3

  • Package Description

    SMALL OUTLINE, R-PDSO-G3

  • Part Life Cycle Code

    Obsolete

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    N-CHANNEL

  • Reach Compliance Code

    unknown

  • Drain Current-Max (ID)

    2.9 A

  • Transistor Application

    SWITCHING

  • DS Breakdown Voltage-Min

    30 V

  • Operating Temperature-Max

    150°C

  • Power Dissipation-Max (Abs)

    0.96 W

  • Transistor Element Material

    SILICON

  • Drain Current-Max (Abs) (ID)

    2.9 A

  • Drain-source On Resistance-Max

    0.05 Ω

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Qty

Unit Price

Total Price

4359

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call

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