HTS Code

8541.29.00.75

ECCN Code

EAR99

Pin Count

3

Rohs Code

Yes

Brand Name

NXP Semiconductor

Popularity

79

Subcategory

FET General Purpose Power

JESD-30 Code

R-PSSO-G2

Configuration

SINGLE WITH BUILT-IN DIODE

JESD-609 Code

e3

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Surface Mount

YES

Terminal Form

GULL WING

FET Technology

METAL-OXIDE SEMICONDUCTOR

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

Terminal Finish

TIN

Part Package Code

D2PAK

Terminal Position

SINGLE

Number of Elements

1

Source Content uid

PHB27NQ10T,118

Number of Terminals

2

Part Life Cycle Code

Transferred

Qualification Status

Not Qualified

Package Body Material

PLASTIC/EPOXY

Polarity/Channel Type

N-CHANNEL

Reach Compliance Code

not_compliant

Drain Current-Max (ID)

28 A

Transistor Application

SWITCHING

DS Breakdown Voltage-Min

100 V

Manufacturer Package Code

SOT404

Operating Temperature-Max

175°C

Moisture Sensitivity Level

1

Power Dissipation-Max (Abs)

107 W

Transistor Element Material

SILICON

Drain Current-Max (Abs) (ID)

28 A

Avalanche Energy Rating (Eas)

128 mJ

Peak Reflow Temperature (Cel)

245

Drain-source On Resistance-Max

0.05 Ω

Pulsed Drain Current-Max (IDM)

112 A

Time@Peak Reflow Temperature-Max (s)

30