ECCN Code

EAR99

Rohs Code

Yes

Popularity

84

JESD-30 Code

R-PSSO-G2

Configuration

SINGLE WITH BUILT-IN DIODE

Date Of Intro

1999-08-01

JESD-609 Code

e3

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Surface Mount

YES

Terminal Form

GULL WING

FET Technology

METAL-OXIDE SEMICONDUCTOR

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

Terminal Finish

TIN

Terminal Position

SINGLE

Number of Elements

1

Source Content uid

PHB27NQ10T

Number of Terminals

2

Package Description

SMALL OUTLINE, R-PSSO-G2

Part Life Cycle Code

Active

Package Body Material

PLASTIC/EPOXY

Polarity/Channel Type

N-CHANNEL

Reach Compliance Code

not_compliant

Drain Current-Max (ID)

28 A

Transistor Application

SWITCHING

DS Breakdown Voltage-Min

100 V

Moisture Sensitivity Level

1

Transistor Element Material

SILICON

Avalanche Energy Rating (Eas)

128 mJ

Peak Reflow Temperature (Cel)

245

Drain-source On Resistance-Max

0.05 Ω

Pulsed Drain Current-Max (IDM)

112 A

Time@Peak Reflow Temperature-Max (s)

30