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NJVMJD112G
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Manufacturer No NJVMJD112G
Manufacturer ON Semiconductor
Category Power Bipolar Transistors
Datasheet Datasheet
Description 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, 75-TUBE, Automotive Qualified
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Type
Parameter
ECCN Code
EAR99
Brand Name
onsemi
Popularity
65
Pbfree Code
Yes
Subcategory
Other Transistors
JESD-30 Code
R-PSSO-G2
Configuration
DARLINGTON
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
Terminal Finish
Matte Tin (Sn) - annealed
Factory Lead Time
59 weeks
Terminal Position
SINGLE
Number of Elements
1
Reference Standard
AEC-Q101
Source Content uid
NJVMJD112G
Number of Terminals
2
Package Description
,
Part Life Cycle Code
Active
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Reach Compliance Code
not_compliant
DC Current Gain-Min (hFE)
1000
Manufacturer Package Code
369C
Operating Temperature-Max
150°C
Collector Current-Max (IC)
2 A
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
20 W
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Transition Frequency-Nom (fT)
25 MHz
Time@Peak Reflow Temperature-Max (s)
30
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Unit Price
Total Price
11751
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