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CJD112
Details
Manufacturer No CJD112
Manufacturer Central Semiconductor Corp
Category Power Bipolar Transistors
Datasheet Datasheet
Description Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3
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Type
Parameter
HTS Code
8541.29.00.95
Objectid
1463413330
ECCN Code
EAR99
Pin Count
3
Risk Rank
8.89
Rohs Code
No
VCEsat-Max
2 V
Pbfree Code
No
Subcategory
Other Transistors
JESD-30 Code
R-PSSO-G2
Configuration
DARLINGTON
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
COLLECTOR
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Description
DPAK-3
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Reach Compliance Code
not_compliant
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
200
Operating Temperature-Max
150°C
Collector Current-Max (IC)
2 A
Power Dissipation-Max (Abs)
20 W
Transistor Element Material
SILICON
Collector-Emitter Voltage-Max
100 V
Power Dissipation Ambient-Max
20 W
Transition Frequency-Nom (fT)
25 MHz
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Qty
Unit Price
Total Price
3171
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