Details
Manufacturer No MMBT5551LT1
Manufacturer Motorola Semiconductor Products
Category Small Signal Bipolar Transistors
Datasheet Datasheet
Description Small Signal Bipolar Transistor, 0.6A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Price
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Type
Parameter
HTS Code
8541.21.00.95
ECCN Code
EAR99
Rohs Code
No
Popularity
0
VCEsat-Max
0.2 V
Subcategory
Other Transistors
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
JEDEC-95 Code
TO-236AB
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Description
SMALL OUTLINE, R-PDSO-G3
Part Life Cycle Code
Transferred
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Reach Compliance Code
unknown
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
30
Operating Temperature-Max
150°C
Collector Current-Max (IC)
0.6 A
Power Dissipation-Max (Abs)
0.225 W
Transistor Element Material
SILICON
Collector-Emitter Voltage-Max
140 V
Power Dissipation Ambient-Max
0.225 W
Transition Frequency-Nom (fT)
100 MHz
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Unit Price
Total Price
19977
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