MJE271

Details

Manufacturer No MJE271

Manufacturer onsemi

Category Transistors - Bipolar (BJT) - Single

Package TO-225AA, TO-126-3

Datasheet Datasheet

Description TRANS PNP DARL 100V 2A TO126

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Type

Parameter

Mfr

onsemi
Series

-
Package

Bulk
Power - Max

1.5 W
Mounting Type

Through Hole
Package / Case

TO-225AA, TO-126-3
Product Status

Obsolete
Transistor Type

PNP - Darlington
Base Product Number

MJE27
Operating Temperature

-65°C~150°C(TJ)
Frequency - Transition

6MHz
Supplier Device Package

TO-126
Vce Saturation (Max) @ Ib, Ic

3V @ 1.2mA, 120mA
Current - Collector (Ic) (Max)

2 A
Current - Collector Cutoff (Max)

1mA
DC Current Gain (hFE) (Min) @ Ic, Vce

1500 @ 120mA, 10V
Voltage - Collector Emitter Breakdown (Max)

100 V

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Qty

Unit Price

Total Price

8182

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Substitute Products

MJE271G

ON Semiconductor

2.0 A, 100 V PNP Darlington Bipolar Power Transistor, TO-225, 500-BLKBX

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MJE271

Continental Device India Ltd

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3

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MJE271

ON Semiconductor

2A, 100V, PNP, Si, POWER TRANSISTOR, TO-225, CASE 77-09, 3 PIN

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BD680

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NTE254

NTE Electronics Inc

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BD676

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BD678A

Continental Device India Ltd

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3

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MJE701

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BD680A

Continental Device India Ltd

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3

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BD678

Continental Device India Ltd

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3

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BD682

Continental Device India Ltd

Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3

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BD680

Continental Device India Ltd

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3

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