MJD31C-13

Details

Manufacturer No MJD31C-13

Manufacturer Diodes Incorporated

Category Bipolar Transistors - BJT

Package DPAK-3

Datasheet Datasheet

Description Bipolar Transistors - BJT 100V 5A NPN SMT

Price

$0.63

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Type

Parameter

  • RoHS

    Details

  • Brand

    Diodes Incorporated

  • Width

    6.2 mm

  • Height

    2.4 mm

  • Length

    6.8 mm

  • Series

    MJD31C

  • Packaging

    MouseReel

  • Technology

    Si

  • Subcategory

    Transistors

  • Unit Weight

    0.012346 oz

  • Manufacturer

    Diodes Incorporated

  • Product Type

    BJTs - Bipolar Transistors

  • Configuration

    Single

  • Mounting Style

    SMD/SMT

  • Package / Case

    DPAK-3

  • Product Category

    Bipolar Transistors - BJT

  • Transistor Polarity

    NPN

  • Pd - Power Dissipation

    2.1 W

  • DC Current Gain hFE Max

    40 at 3 A, 4 V

  • Gain Bandwidth Product fT

    3 MHz

  • Emitter- Base Voltage VEBO

    6 V

  • Collector- Base Voltage VCBO

    100 V

  • Continuous Collector Current

    3 A

  • Maximum DC Collector Current

    3 A

  • Maximum Operating Temperature

    150°C

  • Minimum Operating Temperature

    -55°C

  • DC Collector/Base Gain hfe Min

    25

  • Collector- Emitter Voltage VCEO Max

    100 V

  • Collector-Emitter Saturation Voltage

    1.2 V

  • Factory Pack Quantity: Factory Pack Quantity

    2500

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Qty

Unit Price

Total Price

1

$0.6111

$0.6111

50

$0.5796

$28.98

100

$0.5607

$56.07

1000

$0.5355

$535.5

Substitute Products

MJD31CT4

STMicroelectronics

Low voltage NPN power transistor

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KSH31C

Samsung Semiconductor

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3

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MJD31C

Motorola Semiconductor Products

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3

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MJD31CETF-SN00207

onsemi

Power Bipolar Transistor

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MJD31CG

Galaxy Microelectronics

Power Bipolar Transistor,

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MJD31CQ-13

Diodes Incorporated

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3/2

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MJD31C-TP-HF

Micro Commercial Components

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3/2

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MJD31CT4G

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3.0 A, 100 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL

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MJD31C-TP

Micro Commercial Components

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, ROHS COMPLIANT, PLASTIC, DPAK-3/2

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MJD31CQ-13

Diodes

Trans GP BJT NPN 100V 3A 1500mW Automotive 3Pin(2+Tab) TO-252 T/R

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MJD31CTF

ON Semiconductor

Trans GP BJT NPN 100V 3A 3Pin(2+Tab) DPAK T/R

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MJD31C

ON Semiconductor

Trans GP BJT NPN 100V 3A 3Pin(2+Tab) DPAK Rail

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