Details
Manufacturer No MJD31CETF
Manufacturer ON Semiconductor
Category Single BJT Transistors
Datasheet Datasheet
Description
Price
Call
Type
Parameter
Mfr
RoHS
yes
Mount
Width
Height
Length
Pbfree
Series
Weight
Package
hFE Min
Polarity
ECCN Code
Frequency
Inventory
4385
Lead Free
Packaging
Pin Count
Published
REACH SVHC
Part Status
Obsolete
Power - Max
RoHS Status
RoHS Compliant
Subcategory
Termination
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE
JEDEC-95 Code
TO-252
JESD-609 Code
Mounting Type
Surface Mount
YES
Terminal Form
GULL WING
Current Rating
Number of Pins
Package / Case
Product Status
Case Connection
COLLECTOR
Contact Plating
Terminal Finish
Transistor Type
Base Part Number
Lifecycle Status
Factory Lead Time
Power Dissipation
Terminal Position
SINGLE
Additional Feature
Number of Elements
1
Voltage - Rated DC
Base Product Number
Radiation Hardening
Transition Frequency
3MHz
Element Configuration
Max Breakdown Voltage
Max Collector Current
Max Power Dissipation
Operating Temperature
Polarity/Channel Type
NPN
Frequency - Transition
Gain Bandwidth Product
Number of Terminations
2
Transistor Application
AMPLIFIER
Supplier Device Package
DC Current Gain-Min (hFE)
10
Collector Current-Max (IC)
3A
Emitter Base Voltage (VEBO)
Transistor Element Material
SILICON
Collector Base Voltage (VCBO)
Collector-Emitter Voltage-Max
100V
Peak Reflow Temperature (Cel)
Vce Saturation (Max) @ Ib, Ic
Current - Collector (Ic) (Max)
Collector Emitter Voltage (VCEO)
Current - Collector Cutoff (Max)
Moisture Sensitivity Level (MSL)
Not Applicable
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Time@Peak Reflow Temperature-Max (s)
DC Current Gain (hFE) (Min) @ Ic, Vce
Voltage - Collector Emitter Breakdown (Max)
Send RFQ
Qty
Unit Price
Total Price
347
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