MJD117G

Details

Manufacturer No MJD117G

Manufacturer ON Semiconductor

Category Power Bipolar Transistors

Datasheet Datasheet

Description 2.0 A, 100 V PNP Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE

Price

$0.93

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Type

Parameter

  • ECCN Code

    EAR99

  • Pin Count

    3

  • Brand Name

    onsemi

  • Popularity

    808

  • Pbfree Code

    Yes

  • Subcategory

    Other Transistors

  • JESD-30 Code

    R-PSSO-G2

  • Configuration

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • JESD-609 Code

    e3

  • Package Shape

    RECTANGULAR

  • Package Style

    SMALL OUTLINE

  • Surface Mount

    YES

  • Terminal Form

    GULL WING

  • Case Connection

    COLLECTOR

  • Terminal Finish

    MATTE TIN

  • Factory Lead Time

    54 weeks

  • Part Package Code

    DPAK (SINGLE GAUGE) TO-252

  • Terminal Position

    SINGLE

  • Number of Elements

    1

  • Source Content uid

    MJD117G

  • Number of Terminals

    2

  • Package Description

    ROHS COMPLIANT, PLASTIC, CASE 369C-01, DPAK-3

  • Part Life Cycle Code

    Active

  • Qualification Status

    Not Qualified

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    PNP

  • Reach Compliance Code

    not_compliant

  • Transistor Application

    SWITCHING

  • DC Current Gain-Min (hFE)

    200

  • Manufacturer Package Code

    369C

  • Operating Temperature-Max

    150°C

  • Collector Current-Max (IC)

    2 A

  • Moisture Sensitivity Level

    1

  • Power Dissipation-Max (Abs)

    50 W

  • Transistor Element Material

    SILICON

  • Collector-Emitter Voltage-Max

    100 V

  • Peak Reflow Temperature (Cel)

    260

  • Transition Frequency-Nom (fT)

    25 MHz

  • Time@Peak Reflow Temperature-Max (s)

    30

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Qty

Unit Price

Total Price

1

$0.9021

$0.9021

50

$0.8556

$42.78

100

$0.8277

$82.77

1000

$0.7905

$790.5

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ON Semiconductor

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MJD117

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Fairchild Semiconductor Corporation

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CJD117

Central Semiconductor Corp

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MJD117-T1

Samsung Semiconductor

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3

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MJD117T4G

ON Semiconductor

2.0 A, 100 V PNP Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL

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MJD117T4

STMicroelectronics

Low voltage PNP power Darlington transistor

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MJD127T4G

ON Semiconductor

8.0 A, 100 V PNP Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL

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MJD127T4

STMicroelectronics

Low voltage PNP power Darlington transistor

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2SB1183F5

ROHM Semiconductor

Small Signal Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon,

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2SB963-Z-AZ

Renesas Electronics Corporation

TRANSISTOR,BJT,DARLINGTON,PNP,60V V(BR)CEO,1A I(C),TO-252

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2SA1648-ZL-AZ

Renesas Electronics Corporation

TRANSISTOR,BJT,DARLINGTON,PNP,60V V(BR)CEO,5A I(C),TO-252

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2SA1648-ZM-AZ

Renesas Electronics Corporation

TRANSISTOR,BJT,DARLINGTON,PNP,60V V(BR)CEO,5A I(C),TO-252

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2SB963-Z-E2-AZ

Renesas Electronics Corporation

TRANSISTOR,BJT,DARLINGTON,PNP,60V V(BR)CEO,1A I(C),TO-252

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2SA1648-ZK-AZ

Renesas Electronics Corporation

TRANSISTOR,BJT,DARLINGTON,PNP,60V V(BR)CEO,5A I(C),TO-252

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KSH117

Samsung Semiconductor

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3

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