Details
Manufacturer No KSH117-TF
Manufacturer Samsung Semiconductor
Category Power Bipolar Transistors
Datasheet Datasheet
Description Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
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Type
Parameter
HTS Code
8541.29.00.95
Objectid
1407962372
ECCN Code
EAR99
Risk Rank
8.67
VCEsat-Max
3 V
JESD-30 Code
R-PSSO-G2
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Description
SMALL OUTLINE, R-PSSO-G2
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
Reach Compliance Code
unknown
DC Current Gain-Min (hFE)
200
Operating Temperature-Max
150°C
Collector Current-Max (IC)
2 A
Transistor Element Material
SILICON
Collector-Emitter Voltage-Max
100 V
Power Dissipation Ambient-Max
20 W
Transition Frequency-Nom (fT)
25 MHz
Collector-Base Capacitance-Max
200 pF
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Qty
Unit Price
Total Price
3440
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