KSH44H11-I

Details

Manufacturer No KSH44H11-I

Manufacturer Samsung Semiconductor

Category Power Bipolar Transistors

Datasheet Datasheet

Description Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

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Type

Parameter

  • HTS Code

    8541.29.00.75

  • Objectid

    1437069230

  • ECCN Code

    EAR99

  • Risk Rank

    8.8

  • VCEsat-Max

    1 V

  • Subcategory

    Other Transistors

  • JESD-30 Code

    R-PSIP-T3

  • Configuration

    SINGLE

  • Package Shape

    RECTANGULAR

  • Package Style

    IN-LINE

  • Surface Mount

    NO

  • Terminal Form

    THROUGH-HOLE

  • Terminal Position

    SINGLE

  • Number of Elements

    1

  • Number of Terminals

    3

  • Package Description

    IN-LINE, R-PSIP-T3

  • Part Life Cycle Code

    Obsolete

  • Qualification Status

    Not Qualified

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    NPN

  • Reach Compliance Code

    unknown

  • Transistor Application

    SWITCHING

  • DC Current Gain-Min (hFE)

    40

  • Operating Temperature-Max

    150°C

  • Collector Current-Max (IC)

    8 A

  • Power Dissipation-Max (Abs)

    20 W

  • Transistor Element Material

    SILICON

  • Collector-Emitter Voltage-Max

    80 V

  • Power Dissipation Ambient-Max

    20 W

  • Transition Frequency-Nom (fT)

    50 MHz

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Qty

Unit Price

Total Price

11393

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MJD44H11-1G

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8 A, 80 V NPN Bipolar Power Transistor, DPAK INSERTION MOUNT, 75-TUBE

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KSH44H11-I

Fairchild Semiconductor Corporation

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3

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MJD44H11-1

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Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3

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MJD44H11-1

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MJD44H11I

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Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3

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Unisonic Technologies Co Ltd

Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, TO-252, 3 PIN

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2SC3303

Toshiba America Electronic Components

TRANSISTOR 5000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

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2SD1804-Q-TM3-T

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MJE13003L-E-TM3-T

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Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic/Epoxy, 3 Pin,

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MJE13003L-B-TM3-T

Unisonic Technologies Co Ltd

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Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, TO-252, 3 PIN

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Small Signal Bipolar Transistor, 8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, LEAD FREE PACKAGE-3

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2SD1803G-R-TM3-T

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