JAN2N1489

Details

Manufacturer No JAN2N1489

Manufacturer Solid State Devices Inc (SSDI)

Category Power Bipolar Transistors

Datasheet Datasheet

Description Power Bipolar Transistor, 6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin

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Type

Parameter

Objectid

1816084716
ECCN Code

EAR99
Risk Rank

7.98
JESD-30 Code

O-MBFM-P2
Configuration

SINGLE
JEDEC-95 Code

TO-3
Package Shape

ROUND
Package Style

FLANGE MOUNT
Surface Mount

NO
Terminal Form

PIN/PEG
Terminal Position

BOTTOM
Number of Elements

1
Reference Standard

MIL
Number of Terminals

2
Package Description

FLANGE MOUNT, O-MBFM-P2
Part Life Cycle Code

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Qualification Status

Not Qualified
Package Body Material

METAL
Polarity/Channel Type

NPN
Reach Compliance Code

compliant
DC Current Gain-Min (hFE)

25
Collector Current-Max (IC)

6 A
Transistor Element Material

SILICON
Collector-Emitter Voltage-Max

40 V

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Qty

Unit Price

Total Price

3840

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Substitute Products

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Solitron Devices Inc

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API Technologies Corp

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Semitronics Corp

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Central Semiconductor Corp

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Baneasa SA

Power Bipolar Transistor, 6A I(C), 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin

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Microsemi FPGA & SoC

Power Bipolar Transistor, 6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin

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JAN2N1489

Microsemi FPGA & SoC

Power Bipolar Transistor, 6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, TO-33, 2 PIN

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2N1489

General Transistor Corp

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Swampscott Electronics Co Inc

Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin, TO-3VAR, 2 PIN

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Hi-Tron Semiconductor Corp

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