Details
Manufacturer No IXTU4N60P
Manufacturer IXYS Corporation
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, TO-251, 3 PIN
Price
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Type
Parameter
ECCN Code
EAR99
Pin Count
3
Rohs Code
Yes
Popularity
0
Pbfree Code
Yes
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-251
Package Shape
RECTANGULAR
Package Style
IN-LINE
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Part Package Code
TO-251
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
3
Package Description
TO-251, 3 PIN
Part Life Cycle Code
Transferred
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
compliant
Drain Current-Max (ID)
4 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
600 V
Operating Temperature-Max
150°C
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
150 mJ
Peak Reflow Temperature (Cel)
NOTSPECIFIED
Drain-source On Resistance-Max
2 Ω
Pulsed Drain Current-Max (IDM)
10 A
Time@Peak Reflow Temperature-Max (s)
NOTSPECIFIED
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Unit Price
Total Price
12876
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