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IXTP200N055T2
Details
Manufacturer No IXTP200N055T2
Manufacturer IXYS
Category Transistors - FETs, MOSFETs - Single
Package TO-220-3
Datasheet Datasheet
Description MOSFET N-CH 55V 200A TO220AB
Price
$4.06
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Type
Parameter
Mfr
IXYS
Series
TrenchT2™
Package
Tube
FET Type
N-Channel
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Mounting Type
Through Hole
Package / Case
TO-220-3
Product Status
Active
Vgs(th) (Max) @ Id
4V @ 250µA
Base Product Number
IXTP200
Operating Temperature
-55°C~175°C(TJ)
Rds On (Max) @ Id, Vgs
4.2mOhm @ 50A, 10V
Power Dissipation (Max)
360W (Tc)
Supplier Device Package
TO-220-3
Gate Charge (Qg) (Max) @ Vgs
109 nC @ 10 V
Drain to Source Voltage (Vdss)
55 V
Input Capacitance (Ciss) (Max) @ Vds
6800 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
200A (Tc)
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Qty
Unit Price
Total Price
1
$3.9382
$3.9382
50
$3.7352
$186.76
100
$3.6134
$361.34
1000
$3.451
$3451
Substitute Products
IXTP220N055T
IXYS Semiconductor
TO-220AB N-CH 55V 220A
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IXTA200N055T2
IXYS Semiconductor
N-Channel 55V 200A 4.2mΩ Surface Mount TrenchT2 Power Mosfet - TO-263
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IXTA220N055T
IXYS Semiconductor
MOSFET N-CH 55V 220A TO-263
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IXTP220N055T
IXYS Corporation
Power Field-Effect Transistor, 220A I(D), 55V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Send RFQ
IXTA200N055T2-7
Littelfuse Inc
Power Field-Effect Transistor,
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IXTQ220N055T
IXYS Corporation
Power Field-Effect Transistor, 220A I(D), 55V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Send RFQ
IXTA200N055T2
IXYS Corporation
Power Field-Effect Transistor, 200A I(D), 55V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
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