Details
Manufacturer No IXTA200N055T2-7
Manufacturer IXYS Corporation
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 200A I(D), 55V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 7 PIN
Price
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Type
Parameter
ECCN Code
EAR99
Pin Count
4
Rohs Code
Yes
Popularity
5
Pbfree Code
Yes
Subcategory
FET General Purpose Power
JESD-30 Code
R-PSSO-G6
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Matte Tin (Sn)
Part Package Code
D2PAK
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
6
Package Description
TO-263, 7 PIN
Part Life Cycle Code
Transferred
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
not_compliant
Drain Current-Max (ID)
200 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
55 V
Operating Temperature-Max
150°C
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
360 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
200 A
Avalanche Energy Rating (Eas)
600 mJ
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max
0.0042 Ω
Pulsed Drain Current-Max (IDM)
500 A
Time@Peak Reflow Temperature-Max (s)
10
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Qty
Unit Price
Total Price
2944
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