IXTA200N055T2-7

Details

Manufacturer No IXTA200N055T2-7

Manufacturer IXYS Corporation

Category Power Field-Effect Transistors

Datasheet Datasheet

Description Power Field-Effect Transistor, 200A I(D), 55V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 7 PIN

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Type

Parameter

  • ECCN Code

    EAR99

  • Pin Count

    4

  • Rohs Code

    Yes

  • Popularity

    5

  • Pbfree Code

    Yes

  • Subcategory

    FET General Purpose Power

  • JESD-30 Code

    R-PSSO-G6

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code

    TO-263

  • JESD-609 Code

    e3

  • Package Shape

    RECTANGULAR

  • Package Style

    SMALL OUTLINE

  • Surface Mount

    YES

  • Terminal Form

    GULL WING

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode

    ENHANCEMENT MODE

  • Case Connection

    DRAIN

  • Terminal Finish

    Matte Tin (Sn)

  • Part Package Code

    D2PAK

  • Terminal Position

    SINGLE

  • Additional Feature

    AVALANCHE RATED

  • Number of Elements

    1

  • Number of Terminals

    6

  • Package Description

    TO-263, 7 PIN

  • Part Life Cycle Code

    Transferred

  • Qualification Status

    Not Qualified

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    N-CHANNEL

  • Reach Compliance Code

    not_compliant

  • Drain Current-Max (ID)

    200 A

  • Transistor Application

    SWITCHING

  • DS Breakdown Voltage-Min

    55 V

  • Operating Temperature-Max

    150°C

  • Moisture Sensitivity Level

    1

  • Power Dissipation-Max (Abs)

    360 W

  • Transistor Element Material

    SILICON

  • Drain Current-Max (Abs) (ID)

    200 A

  • Avalanche Energy Rating (Eas)

    600 mJ

  • Peak Reflow Temperature (Cel)

    260

  • Drain-source On Resistance-Max

    0.0042 Ω

  • Pulsed Drain Current-Max (IDM)

    500 A

  • Time@Peak Reflow Temperature-Max (s)

    10

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Qty

Unit Price

Total Price

2944

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IXTA200N055T2

艾赛斯-IXYS

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IXTP220N055T

IXYS Corporation

Power Field-Effect Transistor, 220A I(D), 55V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

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IXTQ220N055T

IXYS Corporation

Power Field-Effect Transistor, 220A I(D), 55V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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IXTA200N055T2

IXYS Corporation

Power Field-Effect Transistor, 200A I(D), 55V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN

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