Details
Manufacturer No IXTP140N055T2
Manufacturer IXYS Corporation
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 140A I(D), 55V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Price
$5.73
Type
Parameter
ECCN Code
EAR99
Pin Count
3
Rohs Code
Yes
Popularity
22
Pbfree Code
Yes
Subcategory
FET General Purpose Power
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
JESD-609 Code
e1
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN SILVER COPPER
Part Package Code
TO-220AB
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
3
Package Description
FLANGE MOUNT, R-PSFM-T3
Part Life Cycle Code
Transferred
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
compliant
Drain Current-Max (ID)
140 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
55 V
Operating Temperature-Max
175°C
Power Dissipation-Max (Abs)
250 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
140 A
Avalanche Energy Rating (Eas)
600 mJ
Drain-source On Resistance-Max
0.0054 Ω
Pulsed Drain Current-Max (IDM)
350 A
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Qty
Unit Price
Total Price
1
$5.5581
$5.5581
50
$5.2716
$263.58
100
$5.0997
$509.97
1000
$4.8705
$4870.5
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