RFQ
Cart

IRLI610A

Details

Manufacturer No IRLI610A

Manufacturer Fairchild Semiconductor Corporation

Category Power Field-Effect Transistors

Datasheet Datasheet

Description Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

Price

Call

Add To Cart RFQ Buy Now

Type

Parameter

  • ECCN Code

    EAR99

  • Pin Count

    3

  • Rohs Code

    No

  • Popularity

    1

  • Subcategory

    FET General Purpose Power

  • JESD-30 Code

    R-PSIP-T3

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code

    TO-262AA

  • JESD-609 Code

    e0

  • Package Shape

    RECTANGULAR

  • Package Style

    IN-LINE

  • Surface Mount

    NO

  • Terminal Form

    THROUGH-HOLE

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode

    ENHANCEMENT MODE

  • Terminal Finish

    TIN LEAD

  • Part Package Code

    TO-262AA

  • Terminal Position

    SINGLE

  • Number of Elements

    1

  • Source Content uid

    IRLI610A

  • Number of Terminals

    3

  • Package Description

    IN-LINE, R-PSIP-T3

  • Part Life Cycle Code

    Obsolete

  • Qualification Status

    Not Qualified

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    N-CHANNEL

  • Reach Compliance Code

    unknown

  • Drain Current-Max (ID)

    3.3 A

  • Transistor Application

    SWITCHING

  • DS Breakdown Voltage-Min

    200 V

  • Operating Temperature-Max

    150°C

  • Power Dissipation-Max (Abs)

    33 W

  • Transistor Element Material

    SILICON

  • Drain Current-Max (Abs) (ID)

    3.3 A

  • Avalanche Energy Rating (Eas)

    29 mJ

  • Drain-source On Resistance-Max

    1.5 Ω

  • Pulsed Drain Current-Max (IDM)

    12 A

Send RFQ

Qty

Unit Price

Total Price

6121

call

call

Substitute Products

IRLI610A

Samsung Semiconductor

Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3

Send RFQ

IRLI610ATU

Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

Send RFQ

SSI2N90A

Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 2A I(D), 900V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3

Send RFQ

FQI140N03L

Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 140A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

Send RFQ

FQI5N30

Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 5.4A I(D), 300V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

Send RFQ

FQI58N08TU

Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 57.5A I(D), 80V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

Send RFQ

2SK3456-S

Renesas Electronics Corporation

12A, 500V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, MP-25 FIN CUT, 3 PIN

Send RFQ

IRFI740A

Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3

Send RFQ

FQI8N25TU

Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 8A I(D), 250V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

Send RFQ

STI16N65M5

STMicroelectronics

12A, 650V, 0.279ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3

Send RFQ

FQI3N25

Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 2.8A I(D), 250V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

Send RFQ

IRLI530A

Samsung Semiconductor

Power Field-Effect Transistor, 14A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Send RFQ

STI30N65M5

STMicroelectronics

22A, 650V, 0.139ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3

Send RFQ

NP82N055DLE

Renesas Electronics Corporation

82A, 55V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, MP-25 FIN CUT, 3 PIN

Send RFQ

STI85NF55

STMicroelectronics

POWER, FET

Send RFQ

STB80NF55-08-1

STMicroelectronics

80A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, I2PAK-3

Send RFQ

STB5NK52ZD-1

STMicroelectronics

4.4A, 520V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-2

Send RFQ

IPI90N06S4-04

Infineon Technologies AG

Power Field-Effect Transistor, 90A I(D), 60V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN

Send RFQ

RF1S640

Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA,

Send RFQ

FQI70N08TU

Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 70A I(D), 80V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

Send RFQ
Feature Products

UHV1E102MPD1CC

Nichicon

$1.16

Send RFQ

MABA044600KHL

Nichicon

$2.35853

Send RFQ

PPB2201470KEL

Nichicon

$0.54298

Send RFQ

PMB2123470KSL

Nichicon

$7.61976

Send RFQ

MABA044250KHS

Nichicon

$1.55654

Send RFQ

PMB2203560KFRA

Nichicon

$11.674

Send RFQ

PHB1854400KJL

Nichicon

$10.66037

Send RFQ

PSB2303470KRS

Nichicon

$13.65925

Send RFQ

PPB2101330KES

Nichicon

$0.39026

Send RFQ

MHBS454680KHS

Nichicon

$4.60906

Send RFQ

As a leader in the electronic components industry, we are committed to providing the most comprehensive and accurate electronic component information and supplier prices.

  • New Products

Payment Method

©Copyright 2023 IZSOURCE All Rights Reserved