Details
Manufacturer No IRL2505S
Manufacturer International Rectifier
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 104A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Price
$4.74
Type
Parameter
ECCN Code
EAR99
Pin Count
4
Rohs Code
No
Popularity
404
Subcategory
FET General Purpose Power
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN LEAD
Part Package Code
D2PAK
Terminal Position
SINGLE
Additional Feature
LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY
Number of Elements
1
Number of Terminals
2
Package Description
TO-263, 3 PIN
Part Life Cycle Code
Transferred
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
unknown
Drain Current-Max (ID)
104 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
55 V
Operating Temperature-Max
175°C
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
200 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
104 A
Avalanche Energy Rating (Eas)
500 mJ
Peak Reflow Temperature (Cel)
225
Drain-source On Resistance-Max
0.01 Ω
Pulsed Drain Current-Max (IDM)
360 A
Time@Peak Reflow Temperature-Max (s)
30
Send RFQ
Qty
Unit Price
Total Price
1
$4.5978
$4.5978
50
$4.3608
$218.04
100
$4.2186
$421.86
1000
$4.029
$4029
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