IRFZ24VS

Details

Manufacturer No IRFZ24VS

Manufacturer International Rectifier

Category Power Field-Effect Transistors

Datasheet Datasheet

Description Power Field-Effect Transistor, 17A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3

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Type

Parameter

  • ECCN Code

    EAR99

  • Pin Count

    3

  • Rohs Code

    No

  • Popularity

    28

  • JESD-30 Code

    R-PSSO-G2

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • JESD-609 Code

    e0

  • Package Shape

    RECTANGULAR

  • Package Style

    SMALL OUTLINE

  • Surface Mount

    YES

  • Terminal Form

    GULL WING

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode

    ENHANCEMENT MODE

  • Case Connection

    DRAIN

  • Terminal Finish

    TIN LEAD

  • Terminal Position

    SINGLE

  • Additional Feature

    AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

  • Number of Elements

    1

  • Number of Terminals

    2

  • Package Description

    SMALL OUTLINE, R-PSSO-G2

  • Part Life Cycle Code

    Obsolete

  • Qualification Status

    Not Qualified

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    N-CHANNEL

  • Reach Compliance Code

    unknown

  • Drain Current-Max (ID)

    17 A

  • Transistor Application

    SWITCHING

  • DS Breakdown Voltage-Min

    60 V

  • Moisture Sensitivity Level

    1

  • Transistor Element Material

    SILICON

  • Avalanche Energy Rating (Eas)

    43 mJ

  • Drain-source On Resistance-Max

    0.06 Ω

  • Pulsed Drain Current-Max (IDM)

    68 A

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Unit Price

Total Price

12208

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