IRFB3806PBF

Details

Manufacturer No IRFB3806PBF

Manufacturer Infineon

Category Power Field-Effect Transistors

Description Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3

Price

$1.134

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Type

Parameter

ECCN Code

EAR99
Rohs Code

Yes
Popularity

924
Subcategory

FET General Purpose Power
JESD-30 Code

R-PSFM-T3
Configuration

SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code

TO-220AB
Package Shape

RECTANGULAR
Package Style

FLANGE MOUNT
Surface Mount

NO
Terminal Form

THROUGH-HOLE
FET Technology

METAL-OXIDE SEMICONDUCTOR
Operating Mode

ENHANCEMENT MODE
Case Connection

DRAIN
Factory Lead Time

52 weeks
Terminal Position

SINGLE
Number of Elements

1
Source Content uid

IRFB3806PBF
Number of Terminals

3
Package Description

FLANGE MOUNT, R-PSFM-T3
Part Life Cycle Code

Active
Qualification Status

Not Qualified
Package Body Material

PLASTIC/EPOXY
Polarity/Channel Type

N-CHANNEL
Reach Compliance Code

compliant
Drain Current-Max (ID)

43 A
Transistor Application

SWITCHING
DS Breakdown Voltage-Min

60 V
Operating Temperature-Max

175°C
Power Dissipation-Max (Abs)

71 W
Transistor Element Material

SILICON
Drain Current-Max (Abs) (ID)

43 A
Avalanche Energy Rating (Eas)

73 mJ
Peak Reflow Temperature (Cel)

NOTSPECIFIED
Drain-source On Resistance-Max

0.0158 Ω
Pulsed Drain Current-Max (IDM)

170 A
Time@Peak Reflow Temperature-Max (s)

NOTSPECIFIED

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Qty

Unit Price

Total Price

$1.09998

$1.04328

$52.164

100

$1.00926

$100.926

1000

$0.9639

$963.9

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