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IRFSL4610TRR

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Manufacturer No IRFSL4610TRR

Manufacturer Infineon Technologies AG

Category Power Field-Effect Transistors

Datasheet Datasheet

Description Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN

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Type

Parameter

  • ECCN Code

    EAR99

  • Rohs Code

    No

  • Popularity

    0

  • JESD-30 Code

    R-PSIP-T3

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code

    TO-262AA

  • JESD-609 Code

    e3

  • Package Shape

    RECTANGULAR

  • Package Style

    IN-LINE

  • Surface Mount

    NO

  • Terminal Form

    THROUGH-HOLE

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode

    ENHANCEMENT MODE

  • Case Connection

    DRAIN

  • Terminal Finish

    MATTE TIN OVER NICKEL

  • Terminal Position

    SINGLE

  • Number of Elements

    1

  • Source Content uid

    IRFSL4610TRR

  • Number of Terminals

    3

  • Package Description

    LEAD FREE, TO-262, 3 PIN

  • Part Life Cycle Code

    Active

  • Qualification Status

    Not Qualified

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    N-CHANNEL

  • Reach Compliance Code

    compliant

  • Drain Current-Max (ID)

    73 A

  • Transistor Application

    SWITCHING

  • DS Breakdown Voltage-Min

    100 V

  • Moisture Sensitivity Level

    1

  • Transistor Element Material

    SILICON

  • Avalanche Energy Rating (Eas)

    370 mJ

  • Drain-source On Resistance-Max

    0.014 Ω

  • Pulsed Drain Current-Max (IDM)

    290 A

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Unit Price

Total Price

18557

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Substitute Products

IRFSL4610TRL

Infineon Technologies AG

Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN

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IRFSL4610TRL

International Rectifier

Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN

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IRFSL4610PBF

International Rectifier

Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN

Send RFQ

IRFSL4610TRR

International Rectifier

Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN

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IRFSL4610

International Rectifier

Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN

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IRF8010PBF

Infineon Technologies AG

Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

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IXFX80N10Q

Littelfuse Inc

Power Field-Effect Transistor, 80A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN

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IRF8010

Infineon Technologies AG

Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

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IRF8010L

International Rectifier

Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN

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IRF8010HR

International Rectifier

Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

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IRF8010LPBF

International Rectifier

Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN

Send RFQ

IRFSL4610TRR

Infineon Technologies AG

Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN

Send RFQ
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