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AUIRFR3607TRL
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Manufacturer No AUIRFR3607TRL
Manufacturer International Rectifier
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 56A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3
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Type
Parameter
ECCN Code
EAR99
Pin Count
3
Rohs Code
Yes
Popularity
231
Pbfree Code
Yes
Subcategory
FET General Purpose Power
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252AA
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
MATTE TIN OVER NICKEL
Part Package Code
TO-252AA
Terminal Position
SINGLE
Additional Feature
HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Number of Elements
1
Number of Terminals
2
Package Description
SMALL OUTLINE, R-PSSO-G2
Part Life Cycle Code
Transferred
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
compliant
Drain Current-Max (ID)
56 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
75 V
Operating Temperature-Max
175°C
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
140 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
80 A
Avalanche Energy Rating (Eas)
120 mJ
Drain-source On Resistance-Max
0.009 Ω
Pulsed Drain Current-Max (IDM)
310 A
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Unit Price
Total Price
11212
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call
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